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MSS40-244-E35

MA-COM
Part Number MSS40-244-E35
Manufacturer MA-COM
Description Medium Barrier Silicon Schottky Diodes
Published Jul 20, 2018
Detailed Description MSS40-xxx-x Series Medium Barrier Silicon Schottky Diodes Features  VF, RD and CJ Matching Options  Chip, Beam Lead an...
Datasheet PDF File MSS40-244-E35 PDF File

MSS40-244-E35
MSS40-244-E35


Overview
MSS40-xxx-x Series Medium Barrier Silicon Schottky Diodes Features  VF, RD and CJ Matching Options  Chip, Beam Lead and Packaged Devices  Hi-Rel Screening per MIL-PRF-19500 and MIL- PRF-38534 Available Description The MSS40-xxx-x Series of Schottky diodes are fabricated on N-Type epitaxial substrates using proprietary processes that yield the highest FCOs in the industry.
Optimum mixer performance is obtained with LO power of 0 dBm to +6 dBm per diode.
Rev.
V1 Chip Electrical Specifications: TA = 25°C Model Configuration MSS40-045-C15 Single Junction VF Typ.
V 0.
42 MSS40-048-C15 Single Junction 0.
40 Test Conditions IF = 1 mA VBR Min.
V 3 CJ Typ.
/ Max.
pF 0.
09 / 0.
12 3 0.
12 / 0.
15 IR = 10 µA VR = 0 V F = 1 MHz RS Typ.
Ω 7 7 RD Max.
Ω 15 15 I = 5 mA FCO Typ.
GHz 253 190 Outline C15 C15 Beam Lead Electrical Specifications: TA = 25°C Model Configuration MSS40-141-B10B Single Junction VF Typ.
V 0.
42 VBR Min.
V 3 CJ Typ.
/ Max.
pF 0.
06 / 0.
10 MSS40-...


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