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MSS50-244-H30

MA-COM
Part Number MSS50-244-H30
Manufacturer MA-COM
Description High Barrier Silicon Schottky Diodes
Published Jul 20, 2018
Detailed Description MSS50-xxx-x Series High Barrier Silicon Schottky Diodes Features  VF, RD and CJ Matching Options  Chip, Beam Lead and ...
Datasheet PDF File MSS50-244-H30 PDF File

MSS50-244-H30
MSS50-244-H30

Overview
MSS50-xxx-x Series High Barrier Silicon Schottky Diodes Features  VF, RD and CJ Matching Options  Chip, Beam Lead and Packaged Devices  Hi-Rel Screening per MIL-PRF-19500 and MIL- PRF-38534 Available Description The MSS50-xxx-x Series of Schottky diodes are fabricated on N-Type epitaxial substrates using proprietary processes that yield the highest FCOs in the industry.
Optimum mixer performance is obtained with LO power of +2 dBm to +8 dBm per diode.
Rev.
V1 Chip Electrical Specifications: TA = 25°C Model Configuration VF Typ.
V MSS50-048-C15 Single Junction 0.
5 VBR Min.
V 4 CJ Typ.
/ Max.
pF 0.
12 / 0.
15 MSS50-062-C16 Test Conditions Single Junction 0.
5 IF = 1 mA 5 0.
50 / 0...


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