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NXPSC06650D

WeEn
Part Number NXPSC06650D
Manufacturer WeEn
Description Silicon Carbide Diode
Published Jul 25, 2018
Detailed Description NXPSC06650D Silicon Carbide Diode 4 January 2017 Product data sheet 1. General description Silicon Carbide Schottky di...
Datasheet PDF File NXPSC06650D PDF File

NXPSC06650D
NXPSC06650D

Overview
NXPSC06650D Silicon Carbide Diode 4 January 2017 Product data sheet 1.
General description Silicon Carbide Schottky diode designed for high frequency switched mode power supplies in a TO252 (DPAK) plastic package.
2.
Features and benefits • Highly stable switching performance • High forward surge capability IFSM • Extremely fast reverse recovery time • Superior in efficiency to Silicon Diode alternatives • Reduced losses in associated MOSFET • Reduced EMI • Reduced cooling requirements • RoHS compliant 3.
Applications • Power factor correction • Telecom/Server SMPS • UPS • PV inverter • PC Silverbox • LED/OLED TV • Motor Drives 4.
Quick reference data Table 1.
Quick reference data Symbol Parameter Conditions VRRM repetitive peak reverse voltage IF(AV) average forward current δ = 0.
5 ; Tmb ≤ 125 °C; square-wave pulse; Fig.
1; Fig.
2; Fig.
3; Fig.
4 Tj junction temperature Static characteristics VF forward voltage Dynamic characteristics ...


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