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ACT108W-800E

WeEn
Part Number ACT108W-800E
Manufacturer WeEn
Description AC Thyristor power switch
Published Jul 25, 2018
Detailed Description ACT108W-800E AC Thyristor power switch Rev.04 - 31 August 2021 Product data sheet 1. General description AC Thyristor ...
Datasheet PDF File ACT108W-800E PDF File

ACT108W-800E
ACT108W-800E


Overview
ACT108W-800E AC Thyristor power switch Rev.
04 - 31 August 2021 Product data sheet 1.
General description AC Thyristor power switch in a SOT223 surface-mountable plastic package with self-protective capabilities against low and high energy transients.
2.
Features and benefits • Common terminal on mounting base allows multiple ACTs on shared cooling pad • Exclusive negative gate triggering • Full cycle AC conduction • High voltage capability • Remote gate separates the gate driver from the effects of the load current • Safe clamping of low energy over-voltage transients • Self-protective turn-on during high energy voltage transients • Surface-mountable package • Very high noise immunity 3.
Applications • Fan motor circuits • Pump motor circuits • Lower-power highly inductive, resistive and safety loads • Contactors, circuit breakers, valves, dispensers and door locks 4.
Quick reference data Table 1.
Quick reference data Symbol Parameter VDRM repetitive peak off-state voltage IT(RMS) RMS on-state current ITSM non-repetitive peak on- state current Tj junction temperature VPP peak pulse voltage Conditions full sine wave; Tsp ≤ 112 °C; Fig.
1; Fig.
2; Fig.
3 full sine wave; Tj(init) = 25 °C; tp = 20 ms; Fig.
4; Fig.
5 full sine wave; Tj(init) = 25 °C; tp = 16.
7 ms Tj = 25 °C; non-repetitive, off-state; ten pulses on each voltage polarity; 20s or more between successive pulses; Fig.
6 Min Typ Max Unit - - 800 V - - 0.
8 A - - 13 A - - 14.
3 A - - 125 °C - - 2.
5 kV WeEn Semiconductors ACT108W-800E AC Thyristor power switch Symbol Parameter Static characteristics IGT gate trigger current IH holding current VT on-state voltage VCL clamping voltage Dynamic characteristics dVD/dt rate of rise of off-state voltage dIcom/dt rate of change of commutating current Conditions VD = 12 V; IT = 0.
1 A; T2+ G+; Tj = 25 °C; Fig.
10 VD = 12 V; IT = 0.
1 A; T2+ G-; Tj = 25 °C; Fig.
10 VD = 12 V; Tj = 25 °C; Fig.
12 IT = 1.
1 A; Tj = 25 °C; ...



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