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BTA2008-800D

WeEn
Part Number BTA2008-800D
Manufacturer WeEn
Description 3Q Hi-Com Triac
Published Jul 29, 2018
Detailed Description BTA2008-800D 3Q Hi-Com Triac Rev.03 - 09 March 2022 Product data sheet 1. General description Planar passivated high c...
Datasheet PDF File BTA2008-800D PDF File

BTA2008-800D
BTA2008-800D

Overview
BTA2008-800D 3Q Hi-Com Triac Rev.
03 - 09 March 2022 Product data sheet 1.
General description Planar passivated high commutation three quadrant triac in a TO92 plastic package.
This "series D" triac balances the requirements of commutation performance and gate sensitivity and is intended for interfacing with low power drivers and logic ICs including microcontrollers.
2.
Features and benefits • 3Q technology for improved noise immunity • Direct gate triggering from low power drivers and logic ICs • High commutation capability with very sensitive gate • High voltage capability • Planar passivated for voltage ruggedness and reliability • Triggering in three quadrants only • Very sensitive gate for easy logic level triggering 3.
Applications • Low power motor controls • Small inductive loads e.
g.
solenoids, door locks, water valves • Small loads in large white goods 4.
Quick reference data Table 1.
Quick reference data Symbol Parameter Absolute maximum rating Conditions VDRM IT(RMS) ITSM repetitive peak offstate voltage RMS on-state current non-repetitive peak forward current square-wave pulse; Tlead ≤ 70 °C; Fig.
1; Fig.
2; Fig.
3 full sine wave; tp = 20 ms; Tj(init) = 25 °C; Fig.
4; Fig.
5 full sine wave; tp = 16.
7 ms; Tj(init) = 25 °C Tj junction temperature Static characteristics IGT gate trigger current VD = 12 V; IT = 0.
1 A; T2+ G+ Tj = 25 °C; Fig.
7 VD = 12 V; IT = 0.
1 A; T2+ GTj = 25 °C; Fig.
7 VD = 12 V; IT = 0.
1 A; T2- GTj = 25 °C; Fig.
7 Min Typ Max Unit - - 800 V - - 0.
8 A - - 9 A - - 9.
9 A - - 125 °C 0.
25 0.
25 0.
25 - 5 mA 5 mA 5 mA WeEn Semiconductors Symbol Parameter IH holding current VT on-state voltage Dynamic characteristics dVD/dt rate of rise of off-state voltage dIcom/dt rate of change of commutating current Conditions VD = 12 V; Tj = 25 °C; Fig.
9 IT = 0.
85 A; Tj = 25 °C; Fig.
10 VDM = 536 V; Tj = 125 °C; RGT1 = 220 Ω; (VDM = 67% of VDRM); exponential waveform VD = 400 V; Tj = 125 °C; IT(RMS) = 0...


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