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ITCH18180B4E

Innogration
Part Number ITCH18180B4E
Manufacturer Innogration
Description High Power RF LDMOS FET
Published Aug 5, 2018
Detailed Description Innogration (Suzhou) Co., Ltd. Document Number: ITCH18180B4 Preliminary Datasheet V1.0 1785MHz-1880MHz, 180W, 28V High...
Datasheet PDF File ITCH18180B4E PDF File

ITCH18180B4E
ITCH18180B4E

Overview
Innogration (Suzhou) Co.
, Ltd.
Document Number: ITCH18180B4 Preliminary Datasheet V1.
0 1785MHz-1880MHz, 180W, 28V High Power RF LDMOS FETs Description The ITCH18180B4 is a 180-watt, internally matched LDMOS FET, designed for multicarrier WCDMA/PCS/DCS/LTE base station and ISM applications with frequencies from 1785 to 1880 MHz.
It Can be used in Class AB/B and Class C for all typical cellular base station modulation formats.
ITCH18180B4 Typical Performance of Doherty Demo (On Innogration fixture with device soldered): VDD =28 Volts, IDQMAIN =450 mA, VGPEAK=0.
8V, Pulse CW, Pulse Width=20 us, Duty cycle=10% .
Freq P-1dB P-3dB D@P-3 Pavg=45dBm WCDMA Signal(1) (MHz) (dBm) (dBm) (%) Gp (dB) D (%) ACPR5M (dBc) 1785 51.
0 52.
6 58.
7 14.
6 44.
2 -27.
0 1795 51.
3 52.
7 59.
8 14.
7 44.
2 -27.
4 1805 51.
1 52.
6 59.
8 14.
8 44.
4 -27.
4 ITCH18180B4E Typical Performance of Doherty Demo (On Innogration fixture with device soldered): VDD =28 Volts, IDQMAIN =600 ...


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