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ITCH42008E2

Innogration
Part Number ITCH42008E2
Manufacturer Innogration
Description RF Power LDMOS FET
Published Aug 5, 2018
Detailed Description Innogration (Suzhou) Co., Ltd. 500-4200MHz, 8W, 28V RF Power LDMOS FETs Description The ITCH42008E2 is a 8-watt, intern...
Datasheet PDF File ITCH42008E2 PDF File

ITCH42008E2
ITCH42008E2

Overview
Innogration (Suzhou) Co.
, Ltd.
500-4200MHz, 8W, 28V RF Power LDMOS FETs Description The ITCH42008E2 is a 8-watt, internally matched LDMOS FET, designed for cellular base station and ISM applications with frequencies from 500MHz to 4200 MHz Typical Performance (On Innogration fixture with device soldered): VDD = 28 Volts, IDQ = 100 mA，Pulse Width =10us, Duty Cycle =12%.
3600-3800M demo： Frequency (MHz) Gain (dB) P_3dB (dBm) ηD (%) 3600 13.
9 41.
7 47.
6 3700 15.
3 41.
2 46.
8 3800 14.
2 40.
9 44.
9 4000~4200M demo： Frequency (MHz) 4000 Gain (dB) 15.
6 P_3dB (dBm) 40.
6 ηD (%) 39.
8 4100 14.
8 40.
8 41 4200 15.
3 40.
2 41.
7 Highlight: The fixture is used same board different BO...


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