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MR2003C

Part Number	MR2003C
Manufacturer	Innogration
Description	High Power RF LDMOS FET
Published	Aug 5, 2018
Detailed Description	MR2003C LDMOS TRANSISTOR Document Number: MR2003C Preliminary Datasheet V1.1 30W, 28V High Power RF LDMOS FETs Descri...
Datasheet	MR2003C PDF File

Overview

MR2003C LDMOS TRANSISTOR Document Number: MR2003C Preliminary Datasheet V1.
1 30W, 28V High Power RF LDMOS FETs Description The MR2003C is a 30-watt, unmatched LDMOS FETs, designed for Wide-band and Mobile radio applications with frequencies under 2000 MHz.
It can be used MR2003C in Class AB/B and Class C for all typical modulation formats.
It can also operate at lower voltage down to 12V with decrease power capability.
 Typical Performance (On Innogration fixture with device soldered): VDD = 28 Volts, IDQ = 200 mA, CW.
Frequency Gp (dB) P-1dB (W) 1000 MHz 22 30 D@P-1 (%) 65 Notice: It is recommended to operate this device only below 24V like 14V,12.
5V etc, if operation ba...

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