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MM1001

Innogration
Part Number MM1001
Manufacturer Innogration
Description High Power RF LDMOS FET
Published Aug 5, 2018
Detailed Description MM1001 LDMOS TRANSISTOR 10W, 28V High Power RF LDMOS FETs Description The MM1001 is a 10-watt, highly rugged, unmatched ...
Datasheet PDF File MM1001 PDF File

MM1001
MM1001

Overview
MM1001 LDMOS TRANSISTOR 10W, 28V High Power RF LDMOS FETs Description The MM1001 is a 10-watt, highly rugged, unmatched LDMOS FET, designed for wide-band commercial and industrial applications at frequencies up to 2 GHz.
It can be used in Class AB/B and Class C for all typical modulation formats.
Document Number: MM1001 Product Datasheet V4.
0 MM1001  Typical Performance (On Innogration fixture with device soldered): VDD = 28 Volts, IDQ = 100 mA, CW.
Frequency Gp (dB) P-1dB (W) D@P-1 (%) 960 MHz 23 13 63 Features  High Efficiency and Linear Gain Operations  Integrated ESD Protection  Excellent thermal stability, low HCI drift Suitable Applications  2-30MHz (HF or Short wave...


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