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MM10R5

Innogration
Part Number MM10R5
Manufacturer Innogration
Description High Power RF LDMOS FET
Published Aug 5, 2018
Detailed Description MM10R5 LDMOS TRANSISTOR 5W, 28V High Power RF LDMOS FETs Description The MM10R5 is a 5-watt, highly rugged, unmatched LD...
Datasheet PDF File MM10R5 PDF File

MM10R5
MM10R5

Overview
MM10R5 LDMOS TRANSISTOR 5W, 28V High Power RF LDMOS FETs Description The MM10R5 is a 5-watt, highly rugged, unmatched LDMOS FET, designed for wide-band commercial and industrial applications at frequencies HF to 2.
7 GHz.
It can be used in Class AB/B and Class C for all typical modulation formats.
Document Number: MM10R5 Product Datasheet V3.
0 MM10R5 Typical Performance (On Innogration fixture with device soldered): P-1dB= 5 Watts @ 1000 MHz, VDD = 28 Volts, IDQ = 40 mA, CW.
Frequency Gp (dB) P-1dB (W) D@P-1 (%) 1000 MHz 22 5 60 Typical Performance (On Innogration fixture with device soldered): Freq=1.
3GHz，VDD = 24 Volts, IDQ = 10 mA, CW.
Gp (dB) POUT (dBm) D (%) 17.
1 30.
6 30.
4% 17.
2 31.
7 34.
1% 17.
2 32.
6 37.
7% 17.
0 33.
4 40.
6% 16.
5 34.
0 42.
2% Typical Performance (On Innogration fixture with device soldered): VDD = 28 Volts, IDQ = 65 mA, Pulse CW, Pulse Width=100 us, Duty cycle=10% .
Frequency Gp (dB) P-1dB (dBm) D@P-1 (%) 610 MHz ...


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