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MQ1270VP

Part Number	MQ1270VP
Manufacturer	Innogration
Description	High Power RF LDMOS FET
Published	Aug 5, 2018
Detailed Description	MQ1270VP LDMOS TRANSISTOR Document Number: MQ1270VP Preliminary Datasheet V1.0 700W, 50V High Power RF LDMOS FETs Desc...
Datasheet	MQ1270VP PDF File

Overview

MQ1270VP LDMOS TRANSISTOR Document Number: MQ1270VP Preliminary Datasheet V1.
0 700W, 50V High Power RF LDMOS FETs Description The MQ1270VP is a 700-watt, high performance, internally matched LDMOS FET, designed for avionics applications with frequencies 960 to 1215MHz.
It is featured for high power and high ruggedness.
It is recommended to use this device under pulse condition only  Typical long pulse Performance (on innogration wide band test fixture with device soldered): Pulse width:100uS, duty cycle: 10%, Vds = 50 V, Idq = 100 mA, TA = 25 C Freq(MHz) Pin(dBm) Pout(dBm) Pout(W) IDS(A) Gain(dB) 960 46.
5 59 800 3.
76 12.
5 990 46.
5 59.
7 933 3.
96 13.
2 1010 46.
5 60.
2 1047 4.
37 13.
7 1040 46.
5 58.
9 776 3.
81 12.
4 1070 46.
5 59.
6 912 4.
48 13.
1 1100 46.
5 58.
8 750 4.
37 12.
3 1130 46.
5 59.
1 812 4.
35 12.
6 MQ1270VP Eff(%) 43 48 48 41 41 35 38 1160 46.
5 59.
4 870 4.
44 12.
9 40 1190 46.
5 59 800 4 12.
5 41 1215 46.
5 59.
4 870 4.
2 12.
9 42  Typical s...

Similar Datasheet

MQ1270VP High Power RF LDMOS FET - Innogration

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