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MX0160VPX

Part Number	MX0160VPX
Manufacturer	Innogration
Description	High Power RF LDMOS FET
Published	Aug 5, 2018
Detailed Description	MX0160VPX LDMOS TRANSISTOR Document Number: MX0160VPX Preliminary Datasheet V1.0 550W, 50V High Power RF LDMOS FETs De...
Datasheet	MX0160VPX PDF File

Overview

MX0160VPX LDMOS TRANSISTOR Document Number: MX0160VPX Preliminary Datasheet V1.
0 550W, 50V High Power RF LDMOS FETs Description The MX0160VPX is a 550-watt capable, high performance, unmatched LDMOS FET, designed for wide-band commercial and industrial applications with frequencies HF to 0.
2 GHz.
It is the thermally enhancement of its peer MK0160VPX(S) MX0160VPX  Typical performance(on 1.
6-30MHz wideband test board with device soldered) VDS=50V,IDQ=1500mA, Signal：2-Tone space 650Hz CW, Freq(MHz) PAVG(W) Gain(dB) η(%) IMD3(dBc) 1.
6 150 24.
2 38 -35 5 150 24.
4 37 -39 10 150 25.
0 38 -44 15 150 25.
2 38 -44 20 150 24.
8 38 -44 25 150 24.
1 37 -38 30 150 23.
8 36 -32 Features  High Efficiency and Linear Gain Operations  Integrated ESD Protection  Excellent thermal stability, low HCI drift  Large Positive and Negative Gate/Source Voltage Range for Improved Class C Operation  Pb-free, RoHS-compliant Suitable Applications  30-88MHz (Ground communi...

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MX0160VPX High Power RF LDMOS FET - Innogration

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