DatasheetsPDF.com

FX300 Datasheet PDF


Part Number FX300
Manufacturer CML
Title Selective Call Tone Decoders
Description ...
Features ...

File Size 369.14KB
Datasheet FX300 PDF File








Similar Ai Datasheet

FX304 : .

FX30ASJ-03 : FX30ASJ-03 High-Speed Switching Use Pch Power MOS FET Features • Drive voltage : 4 V • VDSS : –30 V • rDS(ON) (max) : 61 mΩ • ID : –30 A • Integrated Fast Recovery Diode (TYP.) : 50 ns Outline RENESAS Package code: PRSS0004ZA-A (Package name: MP-3A) 4 12 3 1 3 2, 4 REJ03G1445-0200 (Previous: MEJ02G0266-0101) Rev.2.00 Aug 07, 2006 1. Gate 2. Drain 3. Source 4. Drain Applications Motor control, Lamp control, Solenoid control, DC-DC converters, etc. Maximum Ratings Parameter Drain-source voltage Gate-source voltage Drain current Drain current (Pulsed) Avalanche drain current (Pulsed) Source current Source current (Pulsed) Maximum power dissipation Channel temperature Storage temperature .

FX30ASJ-03 : PRELIMINARYNSootimcee: pTahriasmisentroict alimfinitsalasrpeescuifbicjeactitotno. change. FX30ASJ-03 MITSUBISHI Pch POWER MOSFET FX30ASJ-03 HIGH-SPEED SWITCHING USE OUTLINE DRAWING 6.5 5.0 ± 0.2 4 Dimensions in mm 0.5 ± 0.1 1.5 ± 0.2 5.5 ± 0.2 10 max 2.3 min 1.0 max • 4V DRIVE • VDSS ... –30V • rDS (ON) (MAX) 61mΩ • ID .. –30A • Integrated Fast Recovery Diode (TYP.) .....50ns APPLICATION Motor control, Lamp control, Solenoid control DC-DC converter, etc. 1.0 0.9 max 2.3 2.3 A 0.5 ± 0.2 0.8 2.3 123 3 1 .

FX30KMJ-03 : P . . nge tion ifica t to cha pec al s subjec in f are ot a is n limits his e: T ametric ic t r No e pa Som IM REL RY A N I MITSUBISHI Pch POWER MOSFET FX30KMJ-03 HIGH-SPEED SWITCHING USE FX30KMJ-03 OUTLINE DRAWING 10 ± 0.3 Dimensions in mm 2.8 ± 0.2 15 ± 0.3 φ 3.2 ± 0.2 14 ± 0.5 3.6 ± 0.3 1.1 ± 0.2 1.1 ± 0.2 0.75 ± 0.15 6.5 ± 0.3 3 ± 0.3 E 0.75 ± 0.15 2.54 ± 0.25 2.54 ± 0.25 1 2 3 3 • 4V DRIVE • VDSS ... –30V • rDS (ON) (MAX) 61mΩ • ID .. –30A • Integrated Fast Recovery Diode (TYP.) .....50n.

FX30KMJ-06 : P . . nge tion ifica t to cha pec al s subjec in f are ot a is n limits his e: T ametric ic t r No e pa Som IM REL RY A N I MITSUBISHI Pch POWER MOSFET FX30KMJ-06 HIGH-SPEED SWITCHING USE FX30KMJ-06 OUTLINE DRAWING 10 ± 0.3 Dimensions in mm 2.8 ± 0.2 15 ± 0.3 φ 3.2 ± 0.2 14 ± 0.5 3.6 ± 0.3 1.1 ± 0.2 1.1 ± 0.2 0.75 ± 0.15 6.5 ± 0.3 3 ± 0.3 E 0.75 ± 0.15 2.54 ± 0.25 2.54 ± 0.25 1 2 3 3 • 4V DRIVE • VDSS ... –60V • rDS (ON) (MAX) 54mΩ • ID .. –30A • Integrated Fast Recovery Diode (TYP.) .....55n.

FX30KMJ-2 : P . . nge tion ifica t to cha pec al s subjec in f are ot a is n limits his e: T ametric ic t r No e pa Som IM REL RY A N I MITSUBISHI Pch POWER MOSFET FX30KMJ-2 HIGH-SPEED SWITCHING USE FX30KMJ-2 OUTLINE DRAWING 10 ± 0.3 Dimensions in mm 2.8 ± 0.2 15 ± 0.3 φ 3.2 ± 0.2 14 ± 0.5 3.6 ± 0.3 1.1 ± 0.2 1.1 ± 0.2 0.75 ± 0.15 6.5 ± 0.3 3 ± 0.3 E 0.75 ± 0.15 2.54 ± 0.25 2.54 ± 0.25 1 2 3 3 • 4V DRIVE • VDSS . –100V • rDS (ON) (MAX) .... 0.143Ω • ID .. –30A • Integrated Fast Recovery Diode (TYP.) ...100ns • .

FX30KMJ-3 : P . . nge tion ifica t to cha pec al s subjec in f are ot a is n limits his e: T ametric ic t r No e pa Som IM REL RY A N I MITSUBISHI Pch POWER MOSFET FX30KMJ-3 HIGH-SPEED SWITCHING USE FX30KMJ-3 OUTLINE DRAWING 10 ± 0.3 Dimensions in mm 2.8 ± 0.2 15 ± 0.3 φ 3.2 ± 0.2 14 ± 0.5 3.6 ± 0.3 1.1 ± 0.2 1.1 ± 0.2 0.75 ± 0.15 6.5 ± 0.3 3 ± 0.3 E 0.75 ± 0.15 2.54 ± 0.25 2.54 ± 0.25 1 2 3 • 4V DRIVE • VDSS . –150V • rDS (ON) (MAX) .... 100mΩ • ID .. –30A • Integrated Fast Recovery Diode (TYP.) ...100ns • Viso.

FX30SMJ-3 : FX30SMJ-3 High-Speed Switching Use Pch Power MOS FET Features • Drive voltage : 4 V • VDSS : –150 V • rDS(ON) (max) : 100 mΩ • ID : –30 A • Integrated Fast Recovery Diode (TYP.) : 100 ns Outline REJ03G1449-0200 (Previous: MEJ02G0292-0101) Rev.2.00 Aug 07, 2006 RENESAS Package code: PRSS0004ZB-A (Package name: TO-3P) 4 3 1 23 1 2, 4 1. Gate 2. Drain 3. Source 4. Drain Applications Motor control, Lamp control, Solenoid control, DC-DC converters, etc. Maximum Ratings Parameter Drain-source voltage Gate-source voltage Drain current Drain current (Pulsed) Avalanche drain current (Pulsed) Source current Source current (Pulsed) Maximum power dissipation Channel temperature Storage temperatu.

FX30SMJ-3 : PRELIMINARYNSootimcee: pTahriasmisentroict alimfinitsalasrpeescuifbicjeactitotno. change. FX30SMJ-3 MITSUBISHI Pch POWER MOSFET FX30SMJ-3 HIGH-SPEED SWITCHING USE OUTLINE DRAWING 15.9 max 4 φ 3.2 Dimensions in mm 4.5 1.5 20.0 2 5.0 4 19.5 min 2 1.0 1 23 5.45 5.45 G 0.6 4.4 2.8 • 4V DRIVE • VDSS . –150V • rDS (ON) (MAX) .... 100mΩ • ID .. –30A • Integrated Fast Recovery Diode (TYP.) ...100ns APPLICATION Motor control, Lamp control, Solenoid control DC-DC converter, etc. 4 3 1 GATE 1 2 DRAIN 3 SOURCE 4 DRAIN 24 .




Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)