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MSAT-P25

MA-COM
Part Number MSAT-P25
Manufacturer MA-COM
Description PIN Diode Attenuator Shunt Element
Published Aug 7, 2018
Detailed Description MSAT-P25 PIN Diode Attenuator Shunt Element Features  Low Distortion Harmonics @ 85 dBc  Broadband performance, >10 GH...
Datasheet PDF File MSAT-P25 PDF File

MSAT-P25
MSAT-P25

Overview
MSAT-P25 PIN Diode Attenuator Shunt Element Features  Low Distortion Harmonics @ 85 dBc  Broadband performance, >10 GHz  Low Insertion Loss & High Attenuation, 27 dB  RoHS* Compliant Description A broadband, High Linearity medium power shunt PIN Attenuator element 1.
9 x 1.
1 mm DFN package.
This device is designed for wireless Telecommunication infrastructure and test instrument applications.
It is also suited for other applications in 0.
1 ~ 10 GHz range.
Rev.
V1 2012 Electrical Specifications: TA = +25°C (measured on evaluation board) Parameter Test Conditions Units Min.
Breakdown Voltage (VBR) Lifetime (LT) Minimum Series Resistance (RS) High Series Resistance (RS) Low Series Resistance (RS) IR = 10 µA IF = 10 m, IR = 6 Ma, 10% / 90% I = -100 mA, 500 MHz I = -10 µA, 500 MHz I = -50 mA, 500 MHz I = -50 mA, <10 GHz V 200 ns 2000 Ω— Ω 1200 Ω 20 28 Typ.
— 3000 1.
5 2200 30 35 Max.
— 5000 2.
5 3000 40 — Absolute Maximum Ratings Parameter Forward Curr...


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