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PDEB2310Y

Potens semiconductor
Part Number PDEB2310Y
Manufacturer Potens semiconductor
Description N-Channel MOSFETs
Published Aug 8, 2018
Detailed Description 20V N-Channel MOSFETs General Description These N-Channel enhancement mode power field effect transistors are using tren...
Datasheet PDF File PDEB2310Y PDF File

PDEB2310Y
PDEB2310Y

Overview
20V N-Channel MOSFETs General Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are well suited for high efficiency fast switching applications.
DFN2x2 6L Pin Configuration D DD SSG D G D S PDEB2310Y V BVDSS RDSON ID 20V 10m 11A Features  20V,11A, RDS(ON) =10mΩ @VGS = 10V  Improved dv/dt capability  ESD Protection Diode Embedded  Green Device Available Applications  MB / VGA / Vcore  POL Applications  SMPS 2nd SR  Li-Battery Protection Absolute Maximum Ratings Tc=25℃ unless otherwise noted Symbol VDS VGS ID IDM PD TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous (TC=25℃) (Chip Limitation) Drain Current – Continuous (TC=100℃) (Chip ...


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