DatasheetsPDF.com

PDB3814S

Potens semiconductor
Part Number PDB3814S
Manufacturer Potens semiconductor
Description Dual N-Channel MOSFETs
Published Aug 8, 2018
Detailed Description Preliminary datasheet 30V Dual N-Channel MOSFETs PDB3814S General Description These N-Channel enhancement mode power ...
Datasheet PDF File PDB3814S PDF File

PDB3814S
PDB3814S

Overview
Preliminary datasheet 30V Dual N-Channel MOSFETs PDB3814S General Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are well suited for high efficiency fast switching applications.
DFN2X2 Dual 2EP Pin Configuration BVDSS 30V RDSON 30m ID 5.
0A Features  30V,5.
0A, RDS(ON) =30mΩ @VGS = 10V  Improved dv/dt capability  Fast switching  100% EAS Guaranteed  Green Device Available Applications ˙ S1 G1 D2 D1 G2 S2 D1 ...


Similar Datasheet


Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)