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PDB2116S

Part Number	PDB2116S
Manufacturer	Potens semiconductor
Description	N+P Dual Channel MOSFETs
Published	Aug 8, 2018
Detailed Description	20V N+P Dual Channel MOSFETs PDB2116S General Description These N+P dual Channel enhancement mode power field effect t...
Datasheet	PDB2116S PDF File

Overview

20V N+P Dual Channel MOSFETs PDB2116S General Description These N+P dual Channel enhancement mode power field effect transistors are using trench DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are well suited for high efficiency fast switching applications.
DFN2X2 Dual 2EP Pin Configuration BVDSS 20V -20V RDSON 40m 100m ID 3.
8A -2.
5A Features  Fast switching  Green Device Available  Suit for 1.
8V Gate Drive Applications ˙ S1 G1 D2 D1 G2 S2 D1 G G1 G2 D2 ApplicNaotteiobonosk  Load Switch  Netwo...

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