DatasheetsPDF.com

PDC3812V

Potens semiconductor
Part Number PDC3812V
Manufacturer Potens semiconductor
Description N-Channel MOSFETs
Published Aug 8, 2018
Detailed Description 30V N-Channel MOSFETs PDC3812V General Description These N-Channel enhancement mode power field effect transistors are...
Datasheet PDF File PDC3812V PDF File

PDC3812V
PDC3812V

Overview
30V N-Channel MOSFETs PDC3812V General Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are well suited for high efficiency fast switching applications.
PPAK3x3 Dual Pin Configuration D1 D1D2 D2 D1 S1G1S2 G2 G1 G2 S1 D2 S2 BVDSS 30V RDSON 20m ID 20A Features  30V,20A, RDS(ON) =20mΩ @VGS = 10V  Improved dv/dt capability  Fast switching  100% EAS Guaranteed  Green Device Available Applications  MB / VGA / V...


Similar Datasheet


Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)