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PDC3701T

Potens semiconductor
Part Number PDC3701T
Manufacturer Potens semiconductor
Description N+P Dual Channel MOSFETs
Published Aug 8, 2018
Detailed Description 30V N+P Dual Channel MOSFETs PDC3701T General Description These N+P dual Channel enhancement mode power field effect t...
Datasheet PDF File PDC3701T PDF File

PDC3701T
PDC3701T

Overview
30V N+P Dual Channel MOSFETs PDC3701T General Description These N+P dual Channel enhancement mode power field effect transistors are using trench DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are well suited for high efficiency fast switching applications.
PPAK5x6 Dual Pin Configuration D2 D2 D1D1 D1 D2 2 G2 S2 G1 S1 G1 G2 S1 S2 BVDSS 30V -30V RDSON 12m 29m ID 23.
3A -15.
2A Features  Fast switching  Green Device Available  Suit for 4.
5V Gate Drive Applications  100% EAS Guaranteed Applications  DC Fan  Motor Drive Applications  Networking  Half / Full Bridge Topology Absolute Maximum Ratings Tc=25℃ unless otherwise noted Symbol VDS VGS ID IDM EAS IAS PD TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous (TC=25℃) Drain Cu...


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