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PDS8966A

Potens semiconductor
Part Number PDS8966A
Manufacturer Potens semiconductor
Description N-Channel MOSFETs
Published Aug 18, 2018
Detailed Description 80V N-Channel MOSFETs PDS8966A General Description These N-Channel enhancement mode power field effect transistors are...
Datasheet PDF File PDS8966A PDF File

PDS8966A
PDS8966A

Overview
80V N-Channel MOSFETs PDS8966A General Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are well suited for high efficiency fast switching applications.
SOP8 Pin Configuration DD D D SSSG G D S BVDSS 80V RDSON 13m ID 19A Features  80V,19A, RDS(ON) =13mΩ@VGS = 10V  Improved dv/dt capability  Fast switching  100% EAS Guaranteed  Green Device Available Applications  Networking  Load Switch  LED applications Absolute Maximum Ratings Tc=25℃ unless otherwise noted Symbol VDS VGS ID IDM EAS IAS PD TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous (TC=25℃) Drain Current – Continuous (TC=100℃) Drain Current – Pulsed1 Single Pulse Avalanch...


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