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PDN3611S

Potens semiconductor
Part Number PDN3611S
Manufacturer Potens semiconductor
Description P-Channel MOSFETs
Published Aug 18, 2018
Detailed Description 30V P-Channel MOSFETs PDN3611S General Description These P-Channel enhancement mode power field effect transistors are...
Datasheet PDF File PDN3611S PDF File

PDN3611S
PDN3611S

Overview
30V P-Channel MOSFETs PDN3611S General Description These P-Channel enhancement mode power field effect transistors are using trench DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are well suited for high efficiency fast switching applications.
SOT23-3S Pin Configuration D S G G D S BVDSS -30V RDSON 65m ID -4.
1A Features  -30V,-4.
1A, RDS(ON) =65mΩ@VGS = -10V  Fast switching  Green Device Available  Suit for -2.
5V Gate Drive Applications Applications  Notebook  Load Switch  Battery Protection  Hand-Held Instruments Absolute Maximum Ratings Tc=25℃ unless otherwise noted Symbol VDS VGS ID IDM PD TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous (TC=25℃) Drain Current – Continuous (TC=100℃) Drain Current – Pulsed1 Power Dis...


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