DatasheetsPDF.com

PDN6911S

Potens semiconductor
Part Number PDN6911S
Manufacturer Potens semiconductor
Description P-Channel MOSFETs
Published Aug 18, 2018
Detailed Description 60V P-Channel MOSFETs General Description These P-Channel enhancement mode power field effect transistors are using tren...
Datasheet PDF File PDN6911S PDF File

PDN6911S
PDN6911S


Overview
60V P-Channel MOSFETs General Description These P-Channel enhancement mode power field effect transistors are using trench DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are well suited for high efficiency fast switching applications.
SOT23-3S Pin Configuration D S G G D S PDN6911S BVDSS -60V RDSON 190m ID -2A Features  -60V,-2A, RDS(ON) =190mΩ@VGS = -10V  Improved dv/dt capability  Fast switching  Green Device Available Applications  Motor Drive  Power Tools  LED Lighting Absolute Maximum Rati...



Similar Datasheet


Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)