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PDQ2116

Potens semiconductor
Part Number PDQ2116
Manufacturer Potens semiconductor
Description N+P Channel MOSFETs
Published Aug 18, 2018
Detailed Description 20V N+P Dual Channel MOSFETs PDQ2116 General Description These N+P dual Channel enhancement mode power BVDSS RDSON I...
Datasheet PDF File PDQ2116 PDF File

PDQ2116
PDQ2116

Overview
20V N+P Dual Channel MOSFETs PDQ2116 General Description These N+P dual Channel enhancement mode power BVDSS RDSON ID field effect transistors are using trench DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, 20V -20V 40m 100m 3.
8A -2.
5A provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are well suited for high efficiency fast switching applications.
SOT23-6 Dual Pin Configuration D1 D1 S1 D2 G1 G G2 D2 Features  Fast switching  Green Device Available  Suit for 1.
8V Gate Drive Applications Applications  Notebook  Load Switch  Networking G2 ...


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