DatasheetsPDF.com

VS3009DS

Vanguard Semiconductor
Part Number VS3009DS
Manufacturer Vanguard Semiconductor
Description 30V/8A Dual N-Channel Advanced Power MOSFET
Published Aug 19, 2018
Detailed Description Features 30V/8A Ron(typ.)=16 mΩ @VGS=10V Ron(typ.)=25 mΩ @VGS=4.5V Low On-Resistance 150°C Operating Temperature F...
Datasheet PDF File VS3009DS PDF File

VS3009DS
VS3009DS

Overview
Features 30V/8A Ron(typ.
)=16 mΩ @VGS=10V Ron(typ.
)=25 mΩ @VGS=4.
5V Low On-Resistance 150°C Operating Temperature Fast Switching Lead-Free, Green Compliant VS3009DS 30V/8A Dual N-Channel Advanced Power MOSFET SOP8 Description VS3009DS designed by the trench processing techniques to achieve extremely low on-resistance.
And fast switching speed and improved transfer effective .
These features combine to make this design an extremely efficient and reliable device for variety of DC-DC applications.
Absolute Maximum Ratings Symbol Parameter Common Ratings (TC=25°C Unless Otherwise Noted) VGS Gate-Source Voltage V(BR)DSS TJ TSTG IS Drain-Source Breakdown Voltage Maximum Junction Temp...


Similar Datasheet


Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)