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HY3003P

HOOYI
Part Number HY3003P
Manufacturer HOOYI
Description N-Channel MOSFET
Published Aug 19, 2018
Detailed Description HY3003P/B N-Channel Enhancement Mode MOSFET Features • 30V/100A RDS(ON)= 3.5mΩ (typ.) @ VGS=10V • 100% EAS Guaranteed ...
Datasheet PDF File HY3003P PDF File

HY3003P
HY3003P


Overview
HY3003P/B N-Channel Enhancement Mode MOSFET Features • 30V/100A RDS(ON)= 3.
5mΩ (typ.
) @ VGS=10V • 100% EAS Guaranteed • Super Low Gate Charge • Excellent CdV/dt effect decline • Advanced high cell density Trench technology • Halogen - Free Device Available Pin Description DS G TO-220FB-3L DS G TO-263-2L Applications • High Frequency Synchronous Buck Converters for Computer Processor Power • High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use Ordering and Marking Information D G N-Channel MOSFET S PB HY3003 HY3003 YYÿ XXXJWW G YYÿ XXXJWW G Package Code P : TO-220FB-3L Date Code YYXXX WW B: TO-263-2L Assembly Material G : Lead Free Device Note: HOOYI lead-free products contain molding compounds/die attach materials and 100% matte tin plate termination finish; which are fully compliant with RoHS.
HOOYI lead-free products meet or exceed the lead-free requirements of IPC/JEDEC J-STD-020D for MSL classificatio...



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