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VSP011P03MD

Vanguard Semiconductor
Part Number VSP011P03MD
Manufacturer Vanguard Semiconductor
Description Dual P-Channel Advanced Power MOSFET
Published Aug 19, 2018
Detailed Description VSP011P03MD -30V/-18A Dual P-Channel Advanced Power MOSFET Features  Dual P-Channel，-5V Logic Level Control  Enhancem...
Datasheet PDF File VSP011P03MD PDF File

VSP011P03MD
VSP011P03MD

Overview
VSP011P03MD -30V/-18A Dual P-Channel Advanced Power MOSFET Features  Dual P-Channel，-5V Logic Level Control  Enhancement mode  Very low on-resistance RDS(on) @ VGS=-4.
5 V  Fast Switching  100% Avalanche test  Pb-free lead plating; RoHS compliant V DS -30 V R @DS(on),TYP VGS=-10 V 11 mΩ R @DS(on),TYP VGS=-4.
5 V 15 mΩ I D -18 A Dual PDFN5x6 Part ID VSP011P03MD Package Type PDFN5x6 Marking 011P03MD Tape and reel information 3000pcs/reel Maximum ratings, at T j=25 °C, unless otherwise specified Symbol Parameter V(BR)DSS IS Drain-Source breakdown voltage Diode continuous forward current ID Continuous drain current@VGS=10V IDM Pulse drain current tested ② PD Maximum power dissipation VGS Gate-Source voltage TC =25°C TC =25°C TC =100°C TC =25°C TC =25°C TSTG Storage temperature range TJ Maximum Junction Temperature① Thermal Characteristics Symbol Parameter RJC Thermal Resistance-Junction to Case RJA Thermal Resistance Junction-A...


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