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VS3522AE

Vanguard Semiconductor
Part Number VS3522AE
Manufacturer Vanguard Semiconductor
Description P-Channel Advanced Power MOSFET
Published Aug 19, 2018
Detailed Description Features  P-Channel，-5V Logic Level Control  Low on-resistance RDS(on) @ VGS=-4.5 V  Fast Switching  Enhancement mod...
Datasheet PDF File VS3522AE PDF File

VS3522AE
VS3522AE

Overview
Features  P-Channel，-5V Logic Level Control  Low on-resistance RDS(on) @ VGS=-4.
5 V  Fast Switching  Enhancement mode  Pb-free lead plating; RoHS compliant VS3522AE -30V/-27A P-Channel Advanced Power MOSFET V DS R @DS(on),TYP VGS=-10 V R @DS(on),TYP VGS=-4.
5V ID -30 V 22 mΩ 39 mΩ -27 A PDFN3333 Part ID VS3522AE Package Type PDFN3333 Marking 3522AE Tape and reel information 5000pcs/Reel Maximum ratings, at TA =25°C, unless otherwise specified Symbol Parameter V(BR)DSS IS Drain-Source breakdown voltage Diode continuous forward current ID Continuous drain current@VGS=-10V IDM EAS Pulse drain current tested ① Avalanche energy, single pulsed ② TC =25°C TC =25°C TC =100°C TC =25°C PD Maximum power dissipation VGS Gate-Source voltage TSTG TJ Storage and operating temperature range Thermal Characteristics TC =25°C Symbol Parameter RJC Thermal Resistance-Junction to Case RJA Thermal Resistance-Junction to Ambient Rating -30 -27 -27...


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