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PDQ0854-R

Part Number	PDQ0854-R
Manufacturer	Potens semiconductor
Description	Dual N-Channel MOSFETs
Published	Aug 20, 2018
Detailed Description	100V Dual N-Channel MOSFETs PDQ0854-R General Description These N-Channel enhancement mode power field effect transist...
Datasheet	PDQ0854-R PDF File

Overview

100V Dual N-Channel MOSFETs PDQ0854-R General Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are well suited for high efficiency fast switching applications.
BVDSS 100V RDSON 330m ID 1.
5A Features  100V,1.
5A, RDS(ON) =330mΩ @VGS = 10V  Improved dv/dt capability  Fast switching  Green Device Available SOT23-6-R Pin Configuration D1 D1 S2 D2 G1 G2 G2 G1 S1 S1 Applications D2  Networking  Load Switch  LED applications S2 Absolute Maximum Ratings Tc=25℃ unless otherwise noted Symbol VDS VGS ID IDM PD TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous (TA=25℃) Drain Current – Continuous (TA=70℃) Drain Current – Pulsed1 Power Dissipatio...

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PDQ0854-R Dual N-Channel MOSFETs - Potens semiconductor

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