DatasheetsPDF.com

PDR4906

Potens semiconductor
Part Number PDR4906
Manufacturer Potens semiconductor
Description N-Channel MOSFETs
Published Aug 21, 2018
Detailed Description 40V N-Channel MOSFETs PDR4906 General Description These N-Channel enhancement mode power field effect transistors are ...
Datasheet PDF File PDR4906 PDF File

PDR4906
PDR4906


Overview
40V N-Channel MOSFETs PDR4906 General Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are well suited for high efficiency fast switching applications.
TO251 Pin Configuration D D G DS G S BVDSS 40V RDSON 8.
5m ID 50A Features  40V, 50A, RDS(ON)=8.
5mΩ@VGS = 10V  Improved dv/dt capability  Fast switching  Green Device Available Applications  Notebook  Load Switch  LED applications  Hand-Held Device Absolu...



Similar Datasheet


Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)