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PDED3096


Part Number PDED3096
Manufacturer Potens semiconductor
Title N-Channel MOSFETs
Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tai...
Features
 30V,70A, RDS(ON) =6mΩ@VGS = 10V
 Improved dv/dt capability
 Fast switching
 100% EAS Guaranteed
 Green Device Available
 G-S ESD Protection Diode Embedded Applications
 MB / VGA / Vcore
 POL Applications
 SMPS 2nd SR Absolute Maximum Ratings Tc=25℃ unless otherwise noted Symbol VDS VGS I...

File Size 573.63KB
Datasheet PDED3096 PDF File








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PDED3098 : These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications. TO252 Pin Configuration D D S G G S BVDSS 30V RDSON 9mΩ ID 50A Features  30V,50A, RDS(ON) =9mΩ@VGS = 10V  Improved dv/dt capability  Fast switching  100% EAS Guaranteed  Green Device Available  G-S ESD Protection Diode Embedded Applications  MB / VGA / Vcore  POL Applications  SMPS 2nd SR Absolute Maximum .




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