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PDED3096

Potens semiconductor
Part Number PDED3096
Manufacturer Potens semiconductor
Description N-Channel MOSFETs
Published Aug 21, 2018
Detailed Description 30V N-Channel MOSFETs PDED3096 General Description These N-Channel enhancement mode power field effect transistors are...
Datasheet PDF File PDED3096 PDF File

PDED3096
PDED3096

Overview
30V N-Channel MOSFETs PDED3096 General Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are well suited for high efficiency fast switching applications.
TO252 Pin Configuration D D S G G S BVDSS 30V RDSON 6mΩ ID 70A Features  30V,70A, RDS(ON) =6mΩ@VGS = 10V  Improved dv/dt capability  Fast switching  100% EAS Guaranteed  Green Device Available  G-S ESD Protection Diode Embedded Applications  MB / VGA / Vcor...


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