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PDD6976-5

Potens semiconductor
Part Number PDD6976-5
Manufacturer Potens semiconductor
Description N-Channel MOSFETs
Published Aug 22, 2018
Detailed Description 65V N-Channel MOSFETs PDD6976-5 General Description These N-Channel enhancement mode power field effect transistors ar...
Datasheet PDF File PDD6976-5 PDF File

PDD6976-5
PDD6976-5

Overview
65V N-Channel MOSFETs PDD6976-5 General Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are well suited for high efficiency fast switching applications.
TO252 Pin Configuration D D S G G S BVDSS 65V RDSON 4.
5m ID 80A Features  65V,80A, RDS(ON) =4.
5mΩ@VGS = 10V  Improved dv/dt capability  Fast switching  100% EAS Guaranteed  Green Device Available Applications  Networking  Load Switch  LED applications  Quick Charger Absolute Maximum Ratings Tc=25℃ unless otherwise noted Symbol VDS VGS ID IDM EAS IAS PD TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous (TC=25℃) Drain Current – Continuous (TC=100℃) Drain Current – Pulsed1 Sing...


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