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PDD8966A

Potens semiconductor
Part Number PDD8966A
Manufacturer Potens semiconductor
Description N-Channel MOSFETs
Published Aug 22, 2018
Detailed Description 80V N-Channel MOSFETs General Description These N-Channel enhancement mode power field effect transistors are using tren...
Datasheet PDF File PDD8966A PDF File

PDD8966A
PDD8966A

Overview
80V N-Channel MOSFETs General Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are well suited for high efficiency fast switching applications.
TO252 Pin Configuration D SG G D S PDD8966A BVDSS 80V RDSON 12m ID 60A Features  80V,60A, RDS(ON) =12mΩ@VGS = 10V  Improved dv/dt capability  Fast switching  100% EAS Guaranteed  Green Device Available Applications  Networking  Load Switch  LED applications Absolute...


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