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PDD0956-1

Potens semiconductor
Part Number PDD0956-1
Manufacturer Potens semiconductor
Description N-Channel MOSFETs
Published Aug 22, 2018
Detailed Description 100V N-Channel MOSFETs PDD0956-1 General Description These N-Channel enhancement mode power field effect transistors a...
Datasheet PDF File PDD0956-1 PDF File

PDD0956-1
PDD0956-1

Overview
100V N-Channel MOSFETs PDD0956-1 General Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are well suited for high efficiency fast switching applications.
TO252 Pin Configuration D S G G D S BVDSS 100V RDSON 115m ID 12A Features  100V,12A , RDS(ON)=115mΩ@VGS=10V  Improved dv/dt capability  Fast switching  100% EAS Guaranteed  100% PB free and Green Device Available Applications  Networking  Load Switch  LED applications Absolute Maximum Ratings Tc=25℃ unless otherwise noted Symbol VDS VGS ID IDM EAS IAS PD TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous (TC=25℃) Drain Current – Continuous (TC=100℃) Drain Current – Pulsed1 Sin...


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