DatasheetsPDF.com

PDD30N15

Potens semiconductor
Part Number PDD30N15
Manufacturer Potens semiconductor
Description N-Channel MOSFETs
Published Aug 22, 2018
Detailed Description 150V N-Channel MOSFETs PDD30N15 General Description These N-Channel enhancement mode power field effect transistors ar...
Datasheet PDF File PDD30N15 PDF File

PDD30N15
PDD30N15

Overview
150V N-Channel MOSFETs PDD30N15 General Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are well suited for high efficiency fast switching applications.
TO252 Pin Configuration D SG G D S BVDSS 150V RDSON 65m ID 25A Features  150V,25A, RDS(ON) 65mΩ@VGS = 10V  VGS Guarantee ± 25V  Improved dv/dt capability  Fast switching  Green Device Available Applications  Notebook  Load Switch  LED applications  Li battery pack application Absolute Maximum Ratings Tc=25℃ unless otherwise noted Symbol VDS VGS ID IDM EAS IAS PD TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous (TC=25℃) Drain Current – Continuous (TC=100℃) Drain Current – Puls...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)