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PDD02N60

Potens semiconductor
Part Number PDD02N60
Manufacturer Potens semiconductor
Description N-Channel MOSFETs
Published Aug 22, 2018
Detailed Description 600V N-Channel MOSFETs General Description These N-Channel enhancement mode power field effect transistors are using adv...
Datasheet PDF File PDD02N60 PDF File

PDD02N60
PDD02N60

Overview
600V N-Channel MOSFETs General Description These N-Channel enhancement mode power field effect transistors are using advanced super junction technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are well suited for high efficiency switch mode power supply TO252 Pin Configuration D S G PDD02N60 BVDSS 600V RDSON 8Ω ID 2A Features  Improved dv/dt capability  Fast switching  100% EAS Guaranteed  Green Device Available Applications  High efficient switched mode power supplies  TV Power  Adapter/charger  Server Power  PV Inverter / UPS Absolute Maximum Ratings Tc=25℃ unless otherwise noted Symbol VDS VGS ID IDM EAS IAS PD TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous (TC=25℃) Drain Current – Continuous (TC=100℃) Drain Current – Pulsed1 S...


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