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PDH4960

Potens semiconductor
Part Number PDH4960
Manufacturer Potens semiconductor
Description N-Channel MOSFETs
Published Aug 22, 2018
Detailed Description 40V N-Channel MOSFETs PDH4960 General Description These N-Channel enhancement mode power field effect transistors are ...
Datasheet PDF File PDH4960 PDF File

PDH4960
PDH4960

Overview
40V N-Channel MOSFETs PDH4960 General Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are well suited for high efficiency fast switching applications.
TO263 Pin Configuration D D SG G S BVDSS 40V RDSON 3.
8m ID 150A Features  40V, 150A, RDS(ON) =3.
8mΩ@VGS = 10V  Improved dv/dt capability  Fast switching  Green Device Available Applications  MB / VGA / Vcore  POL Applications  SMPS 2nd SR Absolute Maximum Ratings Tc=25℃ unless otherwise noted Symbol VDS VGS ID IDM EAS IAS PD TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous (TC=25℃) Drain Current – Continuous (TC=100℃) Drain Current – Pulsed1 Single Pulse Avalanche Energy2 Single Pul...


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