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PDEW2206

Potens semiconductor
Part Number PDEW2206
Manufacturer Potens semiconductor
Description Dual N-Channel MOSFETs
Published Aug 22, 2018
Detailed Description 20V Dual N-Channel MOSFETs PDEW2206 General Description These N-Channel enhancement mode power field effect transistor...
Datasheet PDF File PDEW2206 PDF File

PDEW2206
PDEW2206

Overview
20V Dual N-Channel MOSFETs PDEW2206 General Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are well suited for high efficiency fast switching applications.
TSSOP8 Dual Pin Configuration G2 S2 S2 D1/D2 G1 S1 S1 D1/D2 BVDSS 20V RDSON 9m ID 10A Features  20V, 10A, RDS(ON)=9mΩ@VGS=4.
5V  Improved dv/dt capability  Fast switching  Green Device Available  Suit for 1.
8V Gate Drive Applications Applications  Notebook  Load Switch  LED applications Absolute Maximum Ratings Tc=25℃ unless otherwise noted Symbol VDS VGS ID IDM PD TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous (TC=25℃) Drain Current – Continuous (TC=100℃) Drain Current – Pul...


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