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PDD3710

Potens semiconductor
Part Number PDD3710
Manufacturer Potens semiconductor
Description N+P Dual Channel MOSFETs
Published Aug 22, 2018
Detailed Description 30V N+P Dual Channel MOSFETs PDD3710 General Description These N+P dual Channel enhancement mode power field effect tr...
Datasheet PDF File PDD3710 PDF File

PDD3710
PDD3710

Overview
30V N+P Dual Channel MOSFETs PDD3710 General Description These N+P dual Channel enhancement mode power field effect transistors are using trench DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are well suited for high efficiency fast switching applications.
TO252-4L Pin Configuration D1/D2 D1/D2 S1G1S2G2 G1 G2 S1 S2 BVDSS 30V -30V RDSON 12m 30m ID 16A -12A Features  Fast switching  Green Device Available  Suit for 4.
5V Gate Drive Applications Applications  DC Fan  Motor Drive Applications  Networking  Half / Full Bridge Topology Absolute Maximum Ratings Tc=25℃ unless otherwise noted Symbol VDS VGS ID IDM PD TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous (TC=25℃) Drain Current – Continuous (TC=100℃) Drain Current – P...


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