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PJX53N65D

Potens semiconductor
Part Number PJX53N65D
Manufacturer Potens semiconductor
Description N-Channel MOSFETS
Published Aug 23, 2018
Detailed Description 650V N-Channel MOSFETS PJX53N65D General Description These N-Channel enhancement mode power field effect transistors a...
Datasheet PDF File PJX53N65D PDF File

PJX53N65D
PJX53N65D

Overview
650V N-Channel MOSFETS PJX53N65D General Description These N-Channel enhancement mode power field effect transistors are using Super Junction technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are well suited for high efficiency switch mode power supply TO247 Pin Configuration D S D G G S BVDSS 650V RDSON 69m ID 53A Features  53A,650V, RDS(ON) =69mΩ@VGS = 10V  Improved dv/dt capability  Fast switching  100% EAS Guaranteed  Green Device Available Applications  High efficient switched mode power supplies  LED Lighting  Adapter/charger Absolute Maximum Ratings (Tc=25℃ unless otherwise noted) Symbol VDS VGS ID IDM EAS IAS PD TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous (TC=25℃) Drain Current – Continuous (TC=100℃) Drain Current ...


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