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PJD11N65D

Potens semiconductor
Part Number PJD11N65D
Manufacturer Potens semiconductor
Description N-Channel MOSFETS
Published Aug 23, 2018
Detailed Description 650V N-Channel MOSFETS PJD11N65D General Description These N-Channel enhancement mode power field effect transistors a...
Datasheet PDF File PJD11N65D PDF File

PJD11N65D
PJD11N65D

Overview
650V N-Channel MOSFETS PJD11N65D General Description These N-Channel enhancement mode power field effect transistors are using Super Junction technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are well suited for high efficiency switch mode power supply TO220F Pin Configuration D S G G D S BVDSS 650V RDSON 0.
38 ID 11A Features  11A,650V, RDS(ON) =0.
38Ω@VGS = 10V  Improved dv/dt capability  Fast switching  100% EAS Guaranteed  Green Device Available Applications  High efficient switched mode power supplie...


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