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ST2304SRG

Part Number	ST2304SRG
Manufacturer	Stanson Technology
Description	N-Channel Enhancement Mode MOSFET
Published	Sep 3, 2018
Detailed Description	DESCRIPTION ST2304SRG N Channel Enhancement Mode MOSFET 3.2A ST2304SRG is the N-Channel logic enhancement mode power f...
Datasheet	ST2304SRG PDF File

Overview

DESCRIPTION ST2304SRG N Channel Enhancement Mode MOSFET 3.
2A ST2304SRG is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management, other battery powered circuits, and low in-line power loss are required.
The product is in a very small outline surface mount package.
PIN CONFIGURATION SOT-23 3 D GS 12 FEATURE 30V/3.
2A, RDS(ON) = 44m-ohm (Typ.
) @VGS = 10.
0V 30V/2.
0A, RDS(ON) = 60m-ohm @VGS = 4.
5V Super high ...

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ST2304SRG N-Channel Enhancement Mode MOSFET - Stanson Technology

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