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ST2341SRG

Stanson Technology
Part Number ST2341SRG
Manufacturer Stanson Technology
Description P-Channel Enhancement Mode MOSFET
Published Sep 3, 2018
Detailed Description ST2341SRG P Channel Enhancement Mode MOSFET -3.2A DESCRIPTION ST2341SRG is the P-Channel logic enhancement mode power ...
Datasheet PDF File ST2341SRG PDF File

ST2341SRG
ST2341SRG

Overview
ST2341SRG P Channel Enhancement Mode MOSFET -3.
2A DESCRIPTION ST2341SRG is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management, other battery powered circuits, and low in-line power loss are required.
The product is in a very small outline surface mount package.
PIN CONFIGURATION SOT-23 3 D GS 12 FEATURE ! -20V/-3.
2A, RDS(ON) =45mΩ (Typ.
) @VGS = -4.
5V ! -20V/-2.
0A, RDS(ON) = 53mΩ @VGS = -2.
5V ! Super high density cell design for extremely low RDS(ON) ! Exceptional on-resistance and maximum DC current capability ! SOT-23 package design 1.
Gate 2.
Source 3.
Drain PART MARKING SOT-23 3 4211YYTAA 12 Y: Year Code A: Process Code STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA w...


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