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ST3400S23RG

Stanson Technology
Part Number ST3400S23RG
Manufacturer Stanson Technology
Description N-Channel Enhancement Mode MOSFET
Published Sep 3, 2018
Detailed Description ST3400S23RG N Channel Enhancement Mode MOSFET 5.8A DESCRIPTION The ST3400S23RG is the N-Channel logic enhancement mode p...
Datasheet PDF File ST3400S23RG PDF File

ST3400S23RG
ST3400S23RG

Overview
ST3400S23RG N Channel Enhancement Mode MOSFET 5.
8A DESCRIPTION The ST3400S23RG is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology.
This high-density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits where high side switching.
PIN CONFIGURATION SOT-23-3L 3 D GS 12 1.
Gate 2.
Source 3.
Drain PART MARKING SOT-23-3L 3 A0YA 12 Y: Year Code A: Week Code FEATURE 30V/5.
8A, RDS(ON) = 28mΩ (Typ.
) @VGS = 10V 30V/4.
8A, RDS(ON) = 33mΩ @VGS = 4.
5V 30V/4.
0A, RDS(ON) = 40mΩ @VGS = 2.
5V Super high density cell design for extremely low RDS(ON) Exceptional on-resistance and maximum DC current capability SOT-23-3L package design 1 120 Bentley Square, Mountain View, Ca 94040 USA http://www.
stnasontech.
com STN3400S23RG 2006.
V1 ST3400S23RG N Channe...


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