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ST1004SRG

Stanson Technology
Part Number ST1004SRG
Manufacturer Stanson Technology
Description N-Channel Enhancement Mode MOSFET
Published Sep 3, 2018
Detailed Description ST1004SRG N Channel Enhancement Mode MOSFET 2.0A DESCRIPTION ST1004SRG is the N-Channel logic enhancement mode power fi...
Datasheet PDF File ST1004SRG PDF File

ST1004SRG
ST1004SRG

Overview
ST1004SRG N Channel Enhancement Mode MOSFET 2.
0A DESCRIPTION ST1004SRG is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
The process is especially to improve the overall efficiency of DC/DC conventional switching PWM controllers.
It has been optimized for low gate charge, low RDS(on) and fast switching speed.
PIN CONFIGURATION SOT-23 3 D G 1 S 2 FEATURE 100V/1.
0A, RDS(ON) = 310mΩ @VGS = 10V Super high density cell design for extremely low RDS(ON) Exceptional on-resistance and maximum DC current capability SOT-23 package design 1.
Gate 2.
Source 3.
Drain PART MARKING SOT-23 3 104YA 12 Y: Year Code A: Process Code STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.
stansontech.
com ST1004SRG 2013.
V1 ST1004SRG N Channel Enhancement Mode MOSFET 2.
0A ABSOULTE MAXIMUM RATINGS (Ta = 25℃ Unless otherwise noted ) Parameter Symbol Typical Drain-Source Voltage Gate-Source Volt...


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