DatasheetsPDF.com

ST2309ES

Part Number	ST2309ES
Manufacturer	Stanson Technology
Description	P-Channel Enhancement Mode MOSFET
Published	Sep 3, 2018
Detailed Description	ST2309ES P Channel Enhancement Mode MOSFET -3.0A DESCRIPTION ST2309ES is the P-Channel logic enhancement mode power fi...
Datasheet	ST2309ES PDF File

Overview

ST2309ES P Channel Enhancement Mode MOSFET -3.
0A DESCRIPTION ST2309ES is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management, other battery powered circuits, and low in-line power loss are required.
The product is in a very small outline surface mount package.
PIN CONFIGURATION SOT-23 3 D G 1 S 2 FEATURE ! -60V/-3.
0A, RDS(ON) = 160m-ohm @VGS = -10V ! -60V/-1.
5A, RDS(ON) = 200m-ohm @VGS = -4.
5V ! Sup...

Similar Datasheet

ST2309ES P-Channel Enhancement Mode MOSFET - Stanson Technology

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)