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ST3407S23RG

Stanson Technology
Part Number ST3407S23RG
Manufacturer Stanson Technology
Description P-Channel Enhancement Mode MOSFET
Published Sep 3, 2018
Detailed Description ST3407S23RG P Channel Enhancement Mode MOSFET -3.6A DESCRIPTION ST3407S23RG is the P-Channel logic enhancement mode pow...
Datasheet PDF File ST3407S23RG PDF File

ST3407S23RG
ST3407S23RG

Overview
ST3407S23RG P Channel Enhancement Mode MOSFET -3.
6A DESCRIPTION ST3407S23RG is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management, other battery powered circuits, and low in-line power loss are required.
The product is in a very small outline surface mount package.
PIN CONFIGURATION SOT-23-3L 3 D GS 12 FEATURE -30V/-4.
0A, RDS(ON) = 45mΩ(Typ.
) @VGS = -10V -30V/-3.
2A, RDS(ON) = 65mΩ @VGS = -4.
5V Super h...


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