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ST3401M23RG

Stanson Technology
Part Number ST3401M23RG
Manufacturer Stanson Technology
Description P-Channel Enhancement Mode MOSFET
Published Sep 3, 2018
Detailed Description ST3401M23RG P Channel Enhancement Mode MOSFET -4.0A DESCRIPTION ST3401M23RG is the P-Channel logic enhancement mode po...
Datasheet PDF File ST3401M23RG PDF File

ST3401M23RG
ST3401M23RG

Overview
ST3401M23RG P Channel Enhancement Mode MOSFET -4.
0A DESCRIPTION ST3401M23RG is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management, other battery powered circuits, and low in-line power loss are required.
The product is in a very small outline surface mount package.
PIN CONFIGURATION SOT-23-3L FEATURE 3 D G 1 S 2 1.
Gate 2.
Source 3.
Drain -30V/-4.
0A, RDS(ON) = 53mΩ (Typ.
) @VGS = -10V -30V/-3.
2A, RDS(ON) = 60mΩ @VGS = -4.
5V Super high density cell design for Extremely low RDS(ON) Exceptional on-resistance and maximum DC current capability SOT-23-3L package design PART MARKING SOT-23-3L 3 A1YA 12 Y: Year Code A: Process Code STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 U...


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