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ST18N10D

STANSON
Part Number ST18N10D
Manufacturer STANSON
Description N-Channel Enhancement Mode MOSFET
Published Sep 3, 2018
Detailed Description ST18N10D N Channel Enhancement Mode MOSFET 18.0A DESCRIPTION ST18N10D is the N-Channel logic enhancement mode power fiel...
Datasheet PDF File ST18N10D PDF File

ST18N10D
ST18N10D

Overview
ST18N10D N Channel Enhancement Mode MOSFET 18.
0A DESCRIPTION ST18N10D is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
The ST18N10D has been designed specially to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.
It has been optimized for low gate charge, low RDS(ON) and fast switching speed.
PIN CONFIGURATION (D-PAK) TO-252 FEATURE ! 100V/12.
0A, RDS(ON) = 90mΩ(Typ.
) @VGS = 10V ! 100V/8.
0A, RDS(ON) = 100mΩ @VGS = 4.
0V Super high density cell design for extremely low RDS(ON) ! Exceptional on-resistance and maximum DC current capability ...


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