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STN444DN

STANSON
Part Number STN444DN
Manufacturer STANSON
Description N-Channel Enhancement Mode MOSFET
Published Sep 3, 2018
Detailed Description STN444DN N Channel Enhancement Mode MOSFET 100A DESCRIPTION STN444DN uses Trench MOSFET technology that is uniquely opti...
Datasheet PDF File STN444DN PDF File

STN444DN
STN444DN

Overview
STN444DN N Channel Enhancement Mode MOSFET 100A DESCRIPTION STN444DN uses Trench MOSFET technology that is uniquely optimized to provide the most efficient nigh frequency switching performance.
It has been optimized for low gate charge, low RDS(ON) and fast switching speed.
PIN CONFIGURATION PowerPAK 5x6L(1212-8) DD DD FEATURE l 30V/30A, RDS(ON) = 2.
6mΩ（Typ.
） @VGS = 10V l 30V/15A, RDS(ON) = 3.
4mΩ @VGS = 4.
5V l Super high density cell design for extremely low RDS(ON) l Exceptional on-resistance and maximum DC current capability l PowerPAK 5x6L(1212-8) package design S S SG Y：Year Code A：Date Code B：Package Code C：Wafer Code STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.
stansontech.
com Copyright © 2009, Stanson Corp.
STN444DN 2016 V1 STN444DN N Channel Enhancement Mode MOSFET 100A ABSOULTE MAXIMUM RATINGS (Ta = 25℃ Unless otherwise noted ) Parameter Symbol Typical Drain-Source Voltage VDSS Gate-Source Voltage Continuous Drain Current...


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