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ST75N75

STANSON
Part Number ST75N75
Manufacturer STANSON
Description N-Channel Enhancement Mode MOSFET
Published Sep 3, 2018
Detailed Description ST75N75 N Channel Enhancement Mode MOSFET 75.0A DESCRIPTION ST75N75 is used trench technology to provide excellent RDS(o...
Datasheet PDF File ST75N75 PDF File

ST75N75
ST75N75

Overview
ST75N75 N Channel Enhancement Mode MOSFET 75.
0A DESCRIPTION ST75N75 is used trench technology to provide excellent RDS(on) and gate charge.
Those devices are suitable for use as load switch or in PWM applications.
PIN CONFIGURATION TO220-3L FEATURE 75V/40.
0A, RDS(ON) = 8mΩ (Typ.
) @VGS = 10V Super high density cell design for extremely low RDS(ON) Exceptional on-resistance and maximum DC current capability TO-220 package design MARKING PIN CONFI STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.
stansontech.
com Copyright © 2009, Stanson Corp.
ST75N75 2011.
V1 ST75N75 N Channel Enhancement Mode MOSFET 75.
0A ABSOULTE MAXIMUM RATINGS (Ta = 25℃ Unless otherwise noted )...


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